| PART |
Description |
Maker |
| PV15-27B12 PV15-27B24 |
NEW POWER SOURCES 100-1200VDC OVERWIDE AND OVERHIGH INPUT VOLTAGE ISOLATION CONVERTER
|
MORNSUN Science& Technology Ltd.
|
| NC502SM-12 |
Surface Mount Noise Sources 200 kHz to 1 GHz
|
Micronetics, Inc.
|
| NC503SM-12 |
Surface Mount Noise Sources 200 kHz to 2 GHz
|
Micronetics, Inc.
|
| ISL629306 ISL6293-2CRZ-T ISL6293 ISL6293-2CR ISL62 |
Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
|
INTERSIL[Intersil Corporation]
|
| NMA5250-B1M |
High Power Broadband Noise Sources 100 Hz to 1500 MHz
|
Micronetics, Inc.
|
| ISL9214RZ |
Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources 锂聚合物电池充电器可供两个电
|
Intersil, Corp.
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| AD7713ACHIPS |
CMOS, Low Power 24-Bit Sigma-Delta, Signal Conditioning ADC with Matched RTD Current Sources
|
Analog Devices
|
| AD7709ARU AD7709ARUZ AD7709ARU-REEL7 AD7709ARUZ-RE |
16-Bit - ADC with Switchable Current Sources
16-Bit Sigma Delta ADC with Current Sources, Switchable Reference Inputs and I/O Port; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial 4-CH 16-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO24
|
Vicor, Corp.
Analog Devices, Inc.
ANALOG DEVICES INC
|
| NMA5112-B1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA2512-2T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
